2N2221A Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN SILICON PLANAR TRANSISTORS

2N2221A
2N2222A
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221A and
2N2222A types are silicon NPN epitaxial planar
transistors designed for small signal, general purpose
switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
75
40
6.0
800
400
1.2
-65 to +200
438
146
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=150°C
10
μA
ICEV
VCE=60V, VEB=3.0V
10
nA
IEBO
VEB=3.0V
10
nA
BVCBO
IC=10μA
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10μA
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
2N2221A
2N2222A
MIN MAX
MIN MAX
hFE
VCE=10V, IC=0.1mA
20
-
35
-
hFE
VCE=10V, IC=1.0mA
25
-
50
-
hFE
VCE=10V, IC=10mA
35
-
75
-
hFE
VCE=10V, IC=10mA, TA=-55°C
15
-
35
-
hFE
VCE=10V, IC=150mA
40
120
100
300
hFE
VCE=1.0V, IC=150mA
20
-
50
-
hFE
VCE=10V, IC=500mA
25
-
40
-
R3 (30-January 2012)