2N2218 Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN Silicon Planar Transistors

2N2218
2N2218A
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2218 and
2N2218A are silicon NPN transistors manufactured by
the epitaxial planar process, and designed for small
signal general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N2218
60
2N2218A
75
30
40
5.0
6.0
800
800
3.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=50V
ICBO
VCB=60V
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=500mA, IB=50mA
hFE
VCE=10V, IC=100μA
hFE
VCE=10V, IC=1.0mA
hFE
VCE=10V, IC=10mA
hFE
VCE=10V, IC=150mA
hFE
VCE=1.0V, IC=150mA
hFE
VCE=10V, IC=500mA
hFE
VCE=10V, IC=500mA
2N2218
MIN MAX
-
10
-
-
-
-
-
10
60
-
30
-
5.0
-
-
0.4
-
1.6
-
1.3
-
2.6
20
-
25
-
35
-
40
120
20
-
20
-
-
-
2N2218A
MIN MAX
-
-
-
10
-
10
-
10
75
-
40
-
6.0
-
-
0.3
-
1.0
-
1.2
-
2.0
20
-
25
-
35
-
40
120
20
-
-
-
25
-
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
nA
nA
V
V
V
V
V
V
V
R1 (31-July 2013)