2N1613 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistor

2N1613
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1613 is a silicon
NPN epitaxial planar transistor designed for small signal
general purpose switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation (TC=25°C)
PD
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
75
50
7.0
500
3.0
0.8
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100μA
75
BVCER
IC=10mA, RBE=10Ω
50
BVEBO
IE=100μA
7.0
VCE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=150mA, IB=15mA
hFE
VCE=10V, IC=100μA
20
hFE
VCE=10V, IC=10mA
35
hFE
VCE=10V, IC=150mA
40
hFE
VCE=10V, IC=500mA
20
fT
VCE=10V, IC=50mA, f=20MHz
60
Cob
VCB=10V, IE=0, f=100kHz
Cib
VEB=0.5V, IC=0, f=100kHz
NF
VCE=10V, IC=300μA, f=1.0kHz
MAX
10
10
1.5
1.3
120
25
80
12
UNITS
V
V
V
mA
W
W
°C
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
dB
R1 (23-April 2013)