2N1131 Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW POWER PNP SILICONTRANSISTOR

2N1131
SILICON
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1131 is a
silicon PNP transistor mounted in a hermetically
sealed package designed for medium current
switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage (RBE=10Ω)
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation (TC=25°C)
PD
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
50
50
35
5.0
0.6
2.0
0.6
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=30V
ICBO
VCB=30V, TA=150°C
ICBO
VCB=50V
IEBO
VEB=2.0V
BVCBO
IC=100μA
50
BVCER
IC=100mA, RBE=10Ω
50
BVCEO
IC=100mA
35
BVEBO
IE=100μA
5.0
VCE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=150mA, IB=15mA
hFE
VCE=10V, IC=5.0mA
15
hFE
VCE=10V, IC=150mA
20
fT
VCE=10V, IC=50mA, f=20MHz
50
Cob
VCB=10V, IE=0, f=100kHz
Cib
VEB=0.5V, IC=0, f=100kHz
MAX
1.0
100
100
100
1.5
1.3
45
45
80
UNITS
V
V
V
V
A
W
W
°C
UNITS
μA
μA
μA
μA
V
V
V
V
V
V
MHz
pF
pF
R0 (3-April 2013)