1N5615 Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED FAST SWITCHING RECTIFIER

1N5615 1N5621
1N5617 1N5623
1N5619
FAST RECOVERY
GLASS PASSIVATED
SILICON RECTIFIERS
1.0 AMP, 200 THRU 1000 VOLT
GPR-1A CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5615 series
types are silicon rectifiers mounted in a hermetically
sealed, glass passivated package, designed for general
purpose applications where fast reverse recovery times
and high reliability is desired.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 1N5615 1N5617 1N5619 1N5621 1N5623 UNITS
Peak Repetitive Reverse Voltage
VRRM 200 400 600 800 1000 V
DC Blocking Voltage
VR
200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS) 140
280
420
560
700
V
Average Forward Current (TA=55°C)
IO
1.0
A
Peak Forward Surge Current, tp=8.3ms
IFSM
50
A
Operating and Storage Junction Temperature TJ, Tstg
-65 to +200
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=100°C
BVR
IR=50μA (1N5615)
220
BVR
IR=50μA (1N5617)
440
BVR
IR=50μA (1N5619)
660
BVR
IR=50μA (1N5621)
880
BVR
IR=50μA (1N5623)
1100
VF
IF=1.0A
CJ
VR=12V, f=130kHz
trr
IF=0.5A, IR=1.0A, Irr=0.25A (1N5615, 1N5617)
trr
IF=0.5A, IR=1.0A, Irr=0.25A (1N5619)
trr
IF=0.5A, IR=1.0A, Irr=0.25A (1N5621)
trr
IF=0.5A, IR=1.0A, Irr=0.25A (1N5623)
MAX
0.5
25
1.2
35
150
250
300
500
UNITS
μA
μA
V
V
V
V
V
V
pF
ns
ns
ns
ns
R1 (28-February 2013)