1N5614 Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER

1N5614 1N5620
1N5616 1N5622
1N5618
GLASS PASSIVATED
SILICON RECTIFIERS
1.0 AMP, 200 THRU 800 VOLT
GPR-1A CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5614 series
types are silicon rectifiers mounted in a hermetically
sealed, glass passivated package, designed for general
purpose applications where high reliability is desired.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNITS
Peak Repetitive Reverse Voltage
VRRM 200 400 600 800 1000 V
DC Blocking Voltage
VR
200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS) 140
280
420
560
700
V
Average Forward Current (TA=55°C)
IO
1.0
A
Peak Forward Surge Current, tp=8.3ms
IFSM
40
A
Operating and Storage Junction Temperature TJ, Tstg
-65 to +200
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=100°C
BVR
IR=50μA (1N5614)
220
BVR
IR=50μA (1N5616)
440
BVR
IR=50μA (1N5618)
660
BVR
IR=50μA (1N5620)
880
BVR
IR=50μA (1N5622)
1100
VF
IF=1.0A
CJ
VR=12V, f=130kHz
trr
IF=0.5A, IR=1.0A, Irr=0.25A
MAX
0.5
25
1.2
35
2.0
UNITS
μA
μA
V
V
V
V
V
V
pF
μs
R3 (27-February 2013)