1N5550 Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED JUNCTION RECTIFIER

1N5550 1N5553
1N5551 1N5554
1N5552
GLASS PASSIVATED
SILICON RECTIFIERS
3.0 AMP, 200 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5550 series
types are silicon rectifiers mounted in a hermetically
sealed, glass passivated package designed for general
purpose applications where high reliability is required.
MARKING: FULL PART NUMBER
GPR-4AM CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 1N5550 1N5551 1N5552 1N5553 1N5554 UNITS
Peak Repetitive Reverse Voltage
VRRM 200 400 600
800 1000
V
DC Blocking Voltage
VR
200 400 600
800 1000
V
RMS Reverse Voltage
VR(RMS) 140
280
420
560
700
V
Average Forward Current (TA=55°C)
IO
3.0
A
Peak Forward Surge Current, tp=8.3ms
IFSM
100
A
Operating and Storage Junction Temperature TJ, Tstg
-65 to +200
°C
Thermal Resistance (Note 1)
Θ_JL
30
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=100°C
VF
IF=3.0A (200V thru 600V)
VF
IF=3.0A (800V thru 1000V)
BVR
IR=50μA (1N5550)
240
BVR
IR=50μA (1N5551)
460
BVR
IR=50μA (1N5552)
660
BVR
IR=50μA (1N5553)
880
BVR
IR=50μA (1N5554)
1100
trr
IF=0.5A, IR=1.0A, Irr=0.25A (200V thru 600V)
trr
IF=0.5A, IR=1.0A, Irr=0.25A (800V thru 1000V)
Notes: (1) At 0.375 inch (9.52mm) lead length from body.
MAX
1.0
75
1.0
1.1
2.0
4.0
UNITS
μA
μA
V
V
V
V
V
V
V
μs
μs
R2 (27-February 2013)