1N5415 Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED FAST SWITCHING RECTIFIER

1N5419
1N5420
FAST RECOVERY GLASS
PASSIVATED SILICON RECTIFIER
3 AMP, 500 AND 600 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5419 and
1N5420 are Silicon Rectifiers mounted in a hermetically
sealed, glass passivated package, designed for general
purpose applications where fast reverse recovery times
and high reliability are required.
GPR-4AM CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Current (TA=55°C)
IO
Peak Forward Surge Current, tp=8.3ms
IFSM
Operating and Storage Junction Temperature
TJ, Tstg
1N5419
500
1N5420
600
500
600
350
420
3.0
80
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=Rated VRRM
1.0
IR
VR=Rated VRRM, TA=100°C
20
IR
VR=Rated VRRM, TA=175°C
2.0
VF
IF=3.0A
1.1
VF
IF=9.0A
1.5
BVR
IR=50µA (1N5419)
550
BVR
IR=50µA (1N5420)
660
CJ
VR=12V, f=1.0MHz (1N5419)
110
CJ
VR=12V, f=1.0MHz (1N5420)
100
trr
IF=0.5A, IR=1.0A, Irr=0.25A (1N5419)
250
trr
IF=0.5A, IR=1.0A, Irr=0.25A (1N5420)
400
UNITS
µA
µA
mA
V
V
V
V
pF
pF
ns
ns
UNITS
V
V
V
A
A
°C
R2 (11-April 2011)