1N4614 Datasheet, PDF (1/3 Pages) Compensated Deuices Incorporated – LOW CURRENT OPERATION AT 250 uA

1N4614 THRU 1N4627
SILICON ZENER DIODE
LOW NOISE
1.8 VOLT THRU 6.2 VOLT
250mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4614 series
silicon Zener diode is designed for low leakage, low
current, and low noise applications. Higher voltage
devices are available in the 1N4099 series.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
250
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.0V MAX @ IF=200mA (for all types)
TYPE
ZENER
VOLTAGE
VZ @ IZT
MIN NOM MAX
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM
REVERSE
CURRENT
IR @ VR
MAXIMUM
ZENER
CURRENT
IZM
V
V
V
μA
Ω
μA
V
mA
1N4614 1.710 1.8 1.890
250
1200
7.5
1.0
120
1N4615 1.900 2.0 2.100
250
1250
5.0
1.0
110
1N4616 2.090 2.2 2.310
250
1300
4.0
1.0
100
1N4617 2.280 2.4 2.520
250
1400
2.0
1.0
95
1N4618 2.565 2.7 2.835
250
1500
1.0
1.0
90
1N4619 2.850 3.0 3.150
250
1600
0.8
1.0
85
1N4620 3.135 3.3 3.465
250
1650
7.5
1.5
80
1N4621 3.420 3.6 3.780
250
1700
7.5
2.0
75
1N4622 3.705 3.9 4.095
250
1650
5.0
2.0
70
1N4623 4.085 4.3 4.515
250
1600
4.0
2.0
65
1N4624 4.465 4.7 4.935
250
1550
10
3.0
60
1N4625 4.845 5.1 5.355
250
1500
10
3.0
55
1N4626 5.320 5.6 5.880
250
1400
10
4.0
50
1N4627 5.890 6.2 6.510
250
1200
10
5.0
45
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
4.0
5.0
R3 (1-May 2013)