1N4099 Datasheet, PDF (1/3 Pages) Compensated Deuices Incorporated – LOW CURRENT OPERATION AT 250 uA

1N4099 THRU 1N4135
SILICON ZENER DIODE
LOW NOISE
6.8 VOLT THRU 100 VOLT
250mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4099 series
silicon Zener diode is designed for low leakage, low
current, and low noise applications.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
250
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
TYPE
ZENER
VOLTAGE
VZ @ IZT
MIN NOM MAX
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM
REVERSE
CURRENT
IR @ VR
MAXIMUM
ZENER
CURRENT
IZM
V
V
V
μA
Ω
μA
V
mA
1N4099 6.460 6.8 7.140
250
1N4100 7.125 7.5 7.875
250
1N4101 7.790 8.2 8.610
250
1N4102 8.265 8.7 9.135
250
1N4103 8.645 9.1 9.555
250
1N4104 9.50 10 10.50
250
1N4105 10.45 11 11.55
250
1N4106 11.40 12 12.60
250
1N4107 12.35 13 13.65
250
1N4108 13.30 14 14.70
250
1N4109 14.25 15 15.75
250
1N4110 15.20 16 16.80
250
1N4111 16.15 17 17.85
250
1N4112 17.10 18 18.90
250
1N4113 18.05 19 19.95
250
1N4114 19.00 20 21.00
250
1N4115 20.90 22 23.10
250
1N4116 22.80 24 25.20
250
1N4117 23.75 25 26.25
250
1N4118 25.65 27 28.35
250
1N4119 26.60 28 29.40
250
1N4120 28.50 30 31.50
250
1N4121 31.35 33 34.65
250
200
10
5.2
35.0
200
10
5.7
31.8
200
1.0
6.3
29.0
200
1.0
6.7
27.4
200
1.0
7.0
26.2
200
1.0
7.6
24.8
200
0.05
8.5
21.6
200
0.05
9.2
20.4
200
0.05
9.9
19.0
200
0.05
10.7
17.5
100
0.05
11.4
16.3
100
0.05
12.2
15.4
100
0.05
13.0
14.5
100
0.05
13.7
13.2
150
0.05
14.5
12.5
150
0.01
15.2
11.9
150
0.01
16.8
10.8
150
0.01
18.3
9.9
150
0.01
19.0
9.5
150
0.01
20.5
8.8
200
0.01
21.3
8.5
200
0.01
22.8
7.9
200
0.01
25.1
7.2
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
R1 (4-February 2014)