2SC5754 Datasheet, PDF (6/12 Pages) NEC – NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NE664M04 / 2SC5754
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
VCE = 3.2 V, f = 0.9 GHz
ICq = 20 mA, 1/2 Duty
25
Pout
20
GP
300
250
IC
200
15
150
10
100
5
ηC
0
–15 –10 –5
0
5
10
Input Power Pin (dBm)
50
0
15
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
25
250
Pout
20
200
IC
15
150
GP
10
100
5
0
–10 –5
0
ηC
5
10 15
Input Power Pin (dBm)
50
0
20
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
25
250
Pout
20
200
IC
15
150
GP
10
100
5
0
–10 –5
0
ηC
5
10 15
Input Power Pin (dBm)
50
0
20
Remark The graphs indicate nominal characteristics.
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.2 V, f = 2.4 GHz
ICq = 20 mA, 1/2 Duty
25
250
Pout
20
200
IC
15
150
10 ^GP
100
5
0
–5
0
50
ηC
0
5
10 15 20 25
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.2 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
25
250
Pout
20
200
15
GP
IC
150
10
100
5
0
–10 –5
0
50
ηC
0
5
10 15 20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
300
VCE = 3.6 V, f = 1.8 GHz
ICq = 20 mA, 1/2 Duty
25
250
Pout
20
200
15
GP
IC
150
10
100
5
0
–10 –5
0
50
ηC
0
5
10 15 20
Input Power Pin (dBm)
6
Data Sheet PU10008EJ02V0DS