NR6800 Datasheet, PDF (5/8 Pages) California Eastern Labs – 80 um InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS

NR6800 Series
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25C, unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Terminal Capacitance
Cut-off Frequency
Sensitivity
Multiplication Factor
Symbol
Conditions
VBR ID = 100 A
^*1
ID
VR = VBR  0.9
Ct
VR = VBR  0.9, f = 1 MHz
fC
 = 1 310 nm, M = 10
S
 = 1 310 nm, M = 1
M  = 1 310 nm, Ipo = 1.0 A,
VR = V (@ ID = 1 A)
*1  = ^{VBR (25C + TC)  VBR (25C)}
TC · VBR (25C)
MIN.
50
TYP.
70
0.2
MAX.
100
Unit
V
%/C
5
30
nA
0.50
0.75
pF
1.0
GHz
0.80
0.94
A/W
30
50
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Data Sheet PL10786EJ01V0DS
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