NR4211TH Datasheet, PDF (5/7 Pages) California Eastern Labs – InAlAs APD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS

NR4211TH
A Business Partner of Renesas Electronics Corporation.
Chapter Title
ELECTRO-OPTICAL CHARACTERISTICS
(T_C = −5 to +90°C, V_CC = +3.13 to +3.47 V, λ = 1 550 nm, unless otherwise specified)
Parameter
APD Sensitivity
APD Breakdown Voltage
Temperature Coefficient of
APD Breakdown Voltage
APD Dark Current
IC Supply Current
DCA input Voltage
DCA current
Transimpedance
Maximum Output Voltage
Swing
Cut-off Frequency
RF Output Return Loss
Minimum Receiver Sensitivity
Overload
Optical Return Loss
Symbol
S
V_BR
δ ^*1
Conditions
λ = 1 310 nm, M = 1
λ = 1 550 nm, M = 1
I_D = 10 μA
I_D
I_CC
V_DCA
I_DCA
Z_t
V_clip
V_R = V_BR × 0.9, T_C = 25°C
Single-ended
Single-ended
f_C
S₂₂
P_r
P_O
ORL
M = 9, P_in = −27 dBm
1G−6G, M = 9, Single-ended
9.95 Gb/s,
BER = 10^−12, M_opt,
PRBS = 2³¹âˆ’1, ER = 13 dB, NRZ
9.95 Gb/s,
BER = 10^−12, M_opt,
PRBS = 2³¹âˆ’1, ER = 13 dB, NRZ
λ = 1 310 nm
λ = 1 550 nm
MIN.
0.75
0.75
0
TYP.
0.9
0.9
0.02
MAX.
36
0.05
Unit
A/W
V
V/°C
2.5
−30
3 000
6 000
0.7
50
3.5
30
10 000
350
μA
mA
V
μA
Ω
mV_PP
6
7.5
GHz
−5
dB
−27.5 −26.0 dBm
−6.5
dBm
−27
dB
−27
Note: *1.
δ=
ΔV_BR
ΔT_C
R08DS0022EJ0100 Rev.1.00
Sep 13, 2012
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