NR4510US Datasheet, PDF (4/6 Pages) California Eastern Labs – InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER

NR4510US,NR4510UT
ELECTRO-OPTICAL CHARACTERISTICS
(TC = −40 to +85°C, VCC = 3.3 V, λ = 1.31 µm, 1.50 to 1.62 µm, unless otherwise specified)
Parameter
Reverse Break Down Voltage
Temperature Coefficient of Reverse
Breakdown Voltage
Dark Current
Minimum Receiver Sensitivity
Maximum Optical Input Power
Sensitivity
Cut-off Frequency
Optical Return Loss
Transimpedance
Pre-amplifier IC Supply Voltage
Pre-amplifier IC Supply Current
Symbol
Conditions
VBR ID = 100 µA
δ
ID
Pr
Povl
S
fC
ORL
Zt
VCC
ICC
VR = 0.9 VBR, TC = 85°C
2.48832 Gb/s, BER = 10^−10,
PRBS = 2²³âˆ’1, ER = 10 dB, NRZ,
AC-coupled, Mopt
2.48832 Gb/s, BER = 10^−10,
PRBS = 2²³âˆ’1, ER = 10 dB, NRZ,
AC-coupled, M = 3
M = 1, λ = 1.31 µm
M = 1, λ = 1.55 µm
AC-coupled, RL = 50 Ω, M = 10,
−3 dB Ref to 100 MHz
SMF
f = 100 MHz, 50 Ω single-ended,
AC-coupled 50 Ω load
VCC = 3.15 to 3.45 V
MIN.
40
0.09
TYP.
60
MAX.
70
0.15
Unit
V
%/°C
500
nA
−34
−32
dBm
−6
−5
dBm
0.8
0.85
1.7
1.9
A/W
GHz
27
dB
1.25
1.4
kΩ
3.15
3.3
3.45
V
45
60
mA
4
Preliminary Data Sheet PL10510EJ01V0DS