NE851M33 Datasheet, PDF (3/6 Pages) California Eastern Labs – NECs NPN SILICON TRANSISTOR

NE851M33
TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm² × 1.0 mm (t) )
200
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.8
150
0.6
130
100
0.4
50
0.2
0
25
50 75
100 125 150
Ambient Temperature TA (ºC)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
400 µA
50
360 µA
320 µA
40
280 µA
240 µA
30
200 µA
160 µA
20
120 µA
10
80 µA
IB = 40 µA
0
1
2
3
4
5
6
7
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)