NE661M4 Datasheet, PDF (3/10 Pages) California Eastern Labs – NPN SILICON HIGH FREQUENCY TRANSISTOR

TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC POWER DERATING CURVES
100
75
Device Mounted
on a Ceramic
PCB
50
25
Free Air
0
50
100 117 134 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10
140 µA
120 µA
8
100 µA
6
80 µA
60 µA
4
40 µA
2
20 µA
IB = 5 µA
0
1.0
2.0
3.0
Collector to Emitter Voltage, VCE (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR BASE VOLTAGE
0.30
f = 1 MHz
0.25
0.20
0.15
0.10
0.05
0
1.0 2.0 3.0 4.0 5.0
Collector to Base Voltage, VCB (V)
NE661M04
COLLECTOR CURRENT
vs. DC BASE VOLTAGE
50
VCE = 2 V
40
30
20
10
0 0.2 0.4 0.6 0.8 1.0 1.2
DC Base Voltage, VBE (V)
FORWARD CURRENT GAIN
vs. COLLECTOR GAIN
100
80
60
40
20
0
2
4
6
8
10
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
20
15
10
5
0
1
10
100
Collector Current, IC (mA)