2SC5455 Datasheet, PDF (3/9 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
VCE = 3 V
14 ^{f = 2 GHz}
12
10
8
6
4
2
0
1
2
5
10 20
50 100
IC - Collector Current - mA
GAIN WITH MINIMUM NF/NOISE FIGURE
vs. COLLECTOR CURRENT
16
VCE = 3 V
14 f = 2 GHz
12
10
Ga
8
6
4
2
NF
01
10
100
IC - Collector Current - mA
NE67839 / 2SC5455
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
16
VCE = 3 V
14 ^{f = 2 GHz}
12
10
8
6
4
2
0
1
2
5
10 20
50 100
IC - Collector Current - mA
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1
f = 1 MHZ
0.8
0.6
0.4
0.2
01
10
100
VCB - Collector to Base Voltage - V
3