2SA1978 Datasheet, PDF (3/10 Pages) NEC – PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

TYPICAL CHARACTERISTICS
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
400
300
200
100
0
–10
50
100
150
200
TA - Ambient Temperature - ˚C
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
VCE = –1 V
–1.0
NE97833 / 2SA1978
NOISE FIGURE VS. COLLECTOR CURRENT
6
VCE = 10 V
f = 1 GHZ
4
2
01
10
100
IC - Collector Current - mA
COLLECTOR SATURATION AND BASE TO EMITTER
VOLTAGE VS. COLLECTOR CURRENT
–10
VCE = –10 V
IC = 10 · IB
–1.0
–0.1
–0.1
–0.01
–0.1
–1
–10
–100
IC - Collector Current - mA
–1000
INSERTION GAIN vs. COLLECTOR CURRENT
14
f = 1 GHZ
12
VCE = –10 V
10
8
6
VCE = –3 V
4
2
VCE = –1 V
0
1
10
100
IC - Collector Current - mA
–0.01
–0.1
–1
–10
–100
IC - Collector Current - mA
–1000
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
14
f = 1 GHZ
12
VCE = –10 V
10
8
6
4
VCE = –3 V
VCE = –1 V
2
0
1
10
100
IC - Collector Current - mA
3