NR8501BP Datasheet, PDF (2/6 Pages) California Eastern Labs – NECs 50 μm InGaAs APD IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS

NR8501 SERIES
ABSOLUTE MAXIMUM RATINGS¹
(TC = 25°C, unless otherwise specified)
SYMBOLS
PARAMETERS
UNITS RATINGS
IF
Forward Current
mA
10
IR
Reverse Current
mA
1.0
TC
Operating Case Temp.
°C -40 to +85
TSTG Storage Temperature
°C -40 to +85
TSLD Lead Soldering Temperature °C 260 (10 sec.)
RH
Relative Humidity
(noncondensing)
%
85
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified)
WAVELENGTH DEPENDENCE OF
QUANTUM EFFICIENCY
100
80
60
40
20
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Wavelength, λ (µm)
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
100
50
20
10
5
2
1
2
5 10 20
50 100
Reverse Voltage, VR (V)
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
10
1
0.1
1
10
100
Multiplication Factor M