2SC5007 Datasheet, PDF (2/9 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

NE68119 / 2SC5007
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|²
NF
MIN.
80
4.5
10.0
TYP.
7.0
0.45
12.0
1.4
MAX.
0.8
0.8
160
0.9
2.7
UNIT
μA
μA
GHz
pF
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mA^*1
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHz^*2
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
*1 Pulse Measurement PW ≤ 350 μs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
RANK
Marking
hFE
FB
34
80 to 160
2