UPA807T Datasheet, PDF (10/12 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

UPA807T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
j25
j100
j10
0
10
25
50 100
90˚
120˚
60˚
150˚
30˚
180˚
0˚
-j10
-j25
-j100
-j50
Coordinates in Ohms
Frequency in GHz
VCE = 2 V, IC = 7 mA
-150˚
-120˚
-30˚
-60˚
-90˚
UPA807T (Q1)
VCE = 2 V, IC = 7 mA
FREQUENCY
(GHz)
0.10
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
S11
MAG
ANG
0.805
0.754
0.607
0.473
0.372
0.299
0.244
0.201
0.169
0.143
0.123
0.108
0.099
0.090
0.085
0.081
-11.77
-24.34
-43.28
-55.82
-63.72
-68.64
-71.13
-71.73
-71.23
-68.54
-64.48
-59.14
-52.53
-45.90
-38.03
-29.31
S21
MAG
ANG
13.775
12.965
10.749
8.690
7.108
5.946
5.093
4.442
3.943
3.538
3.212
2.947
2.722
2.533
2.374
2.235
166.06
153.40
133.10
118.92
108.93
101.48
95.54
90.57
86.36
82.53
79.11
75.98
73.02
70.41
67.79
65.37
S12
MAG
ANG
0.014
0.028
0.048
0.062
0.075
0.086
0.097
0.109
0.120
0.131
0.143
0.154
0.166
0.177
0.189
0.201
82.53
76.07
67.97
64.39
63.30
63.17
63.46
63.67
63.90
63.94
63.96
63.85
63.75
63.47
63.13
62.72
S22
MAG
ANG
0.955
0.903
0.770
0.659
0.585
0.538
0.508
0.490
0.478
0.472
0.469
0.466
0.464
0.462
0.459
0.456
-9.08
-17.39
-28.70
-34.59
-37.22
-38.37
-38.84
-39.13
-39.31
-39.62
-39.95
-40.33
-40.96
-41.40
-42.20
-42.63
K
MAG
(dB)
0.18
29.79
0.28
26.73
0.48
23.53
0.66
21.45
0.79
19.79
0.88
18.39
0.95
17.18
1.00
15.69
1.04
13.92
1.07
12.70
1.09
11.70
1.10
10.85
1.12
10.08
1.12
9.41
1.13
8.79
1.14
8.23
Note:
1. Gain Calculation:
( ). MAG = ^|S21| K ± K ² - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = ^|S21| , K = ^{1 + | ∆ | 2 - |S11| 2 - |S22| 2} , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain