UPG2314T5N Datasheet, PDF (1/7 Pages) California Eastern Labs – GaAs HBT INTEGRATED CIRCUIT

PRELIMINARY DATA SHEET
GaAs HBT INTEGRATED CIRCUIT
uPG2314T5N
POWER AMPLIFIER FOR Bluetooth^TM Class1
DESCRIPTION
The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for Bluetooth^TM Class1.
This device realizes high efficiency, high gain and high output power by using InGaP HBT.
This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package. And this package is able to high-density
surface mounting.
FEATURES
ï½¥ Operating Frequency
ï½¥ Supply Voltage
ï½¥ Control Voltage
ï½¥ Circuit Current
ï½¥ Output Power
ï½¥ Gain Control Range
ï½¥ High Efficiency
ï½¥ High-density surface mounting
: fopt = 2400 to 2500MHz 2450MHz TYP.
: VCC1,2 = 2.7 to 3.6V 3.0V TYP.
: Vcont = 0 to 3.6V 3.0V TYP.
: Vbias + Venable = 0 to 3.1V 3.0V TYP.
: ICC = 65mA TYP. @ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm
: Pout = +20.0dBm TYP.@ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 3.0V, Pin = 0dBm
: GCR = 23dB TYP.@ VCC1,2 = 3.0V, Vbias + Venable = 3.0V, Vcont = 0 to 3.0V, Pin = 0dBm
: PAE = 50 TYP.
: 6-pin TSON package 1.5 1.5 0.37 mm
APPLICATION
ï½¥ Power Amplifier for Bluetooth^TM Class1
ORDERING INFORMATION
Part Number
Order Number
uPG2314T5N – E2 uPG2314T5N – E2 A
Package
6-pin plastic TSON
Pb-Free
Marking
G5D
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order : uPG2314T5N
Supplying Form
Embossed tape 8 mm wide
Pin1,6 face the perforation side of tape
Qty 3kpcs/reel
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Document No. PG*****EJW8V0PDS ( 8th edition )
Date Published April 2006 CP(K)