UPG2253T6S Datasheet, PDF (1/11 Pages) California Eastern Labs – RF FRONT-END IC FOR BluetoothTM CLASS 1

GaAs HJ-FET INTEGRATED CIRCUIT
PG2253T6S
RF FRONT-END IC FOR Bluetooth^TM CLASS 1
DESCRIPTION
The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a
power amplifier with low-pass filter. And this device has no RF matching parts.
This device realizes high efficiency and low harmonics by 3.0 V operation. This device is housed in a 16-pin plastic
QFN (Quad Flat Non-leaded) (T6S) package. And this package is able to high-density surface mounting by small
external parts.
FEATURES
• Operating frequency
: fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
ended ^{• Supply voltage}
: VDD1, 2, 3 = 3.0 V TYP.
• Control voltage
: Ven = 3.0 V TYP.
• Circuit current
: IDD = 95 mA TYP. @ Pin = 0 dBm
• Output power
: Pout = 19 dBm TYP. @ Pin = 0 dBm
• High efficiency
: PAE = 28% TYP. @ Pin = 0 dBm
m _{• High-density surface mounting : 16-pin plastic QFN package (T6S) (3.0  3.0  0.75 mm)}
ot ^{Recom esign APPLICATION}
• Front-end IC for Bluetooth Class 1, ZigBee^TM etc.
ORDERING INFORMATION
N ^{ew D Part Number}
Order Number
Package
PG2253T6S-E2 PG2253T6S-E2-A 16-pin plastic QFN
For ^{N(T6S) (Pb-Free)}
Marking
Supplying Form
G5Y  Embossed tape 8 mm wide
 Pin 10, 11, 12 face the perforation side of the tape
 Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: PG2253T6S-A
Caution Although this device is designed to be as robust as possible, ESD (Electrostatic
Discharge) can damage this device. This device must be protected at all times from ESD. Static
charges may easily produce potentials of several kilovolts on the human body or equipment, which
can discharge without detection. Industry-standard ESD precautions must be employed at all times.
Document No. PG10761EJ01V0DS (1st edition)
Date Published April 2009 NS