UPG2250T5N Datasheet, PDF (1/12 Pages) California Eastern Labs – 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1

GaAs INTEGRATED CIRCUIT
µPG2250T5N
1.8 V, POWER AMPLIFIER FOR Bluetooth^TM Class 1
DESCRIPTION
The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power.
This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able
to high-density surface mounting.
FEATURES
• Operating frequency
: fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
• Supply voltage
: VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.)
• Control voltage
: Vcont = 1.5 to 2.1 V (1.8 V TYP.)
• Circuit current
: IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm
• Output power
: Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm
• Gain control range
: GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = −5 dBm
• High efficiency
: PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm
• High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)
APPLICATION
• Power Amplifier for Bluetooth Class 1
ORDERING INFORMATION
Part Number
Order Number
Package
µPG2250T5N-E2 µPG2250T5N-E2-A 6-pin plastic TSON
(Pb-Free)
Marking
Supplying Form
G5C
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2250T5N-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10639EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006