UPD5702TU-A Datasheet, PDF (1/10 Pages) California Eastern Labs – Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µPD5702TU
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS
and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin
L2MM (Lead Less Mini Mold) plastic package.
FEATURES
• Output Power
: Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage
: VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.
APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)
ORDERING INFORMATION (Pb-Free)
Part Number
Package
µPD5702TU-E2-A 8-pin Lead-Less Minimold
Marking
5702
Supplying Form
• 8 mm wide embossed taping
• Pin 5, 6, 7, 8 indicates pull-out direction of tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPD5702TU-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10455EJ01V0DS (1st edition)
Date Published November 2003 CP(K)
© NEC Compound Semiconductor Devices 2003