UPC8179TK Datasheet, PDF (1/7 Pages) California Eastern Labs – SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

NEC's SILICON MMIC LOW
CURRENT AMPLIFIER _UPC8179TK
FOR MOBILE COMMUNICATIONS
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm)
• SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
• HIGH EFFICIENCY:
PO(1dB) = +2.0 dBm TYP at f = 1.0 GHz
PO(1dB) = +0.5 dBm TYP at f = 1.9 GHz
PO(1dB) = +0.5 dBm TYP at f = 2.4 GHz
• POWER GAIN:
GP = 13.5 dB TYP at f = 1.0 GHz
GP = 15.5 dB TYP at f = 1.9 GHz
GP = 16.0 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 43 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 42 dB TYP at f = 2.4 GHz
• LOW CURRENT CONSUMPTION:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
0.1 to 2.4 GHz (Output port LC matching)
• LIGHT WEIGHT:
3 mg
APPLICATION
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
PACKAGE OUTLINE TK
1.3 ± 0.05
1.1 ± 0.1
0.16 ± 0.05
BOTTOM
1
6
2
5
3
4
0.2 ± 0.1
0.9
0.55 ± 0.03
0.11
+0.10
-0.05
DESCRIPTION
NEC's UPC8179TK is a silicon monolithic integrated circuit
designed as an amplifier for mobile communications. This IC
can realize low current consumption with external chip induc-
tor. The incorporation of a chip identical to the conventional 6-
pin super minimold package (2.0 x 1.25 x 0.9 mm) μPC8179TB
in a 6-pin leadless minimold package (1.5 x 1.1 x 0.55 mm) has
enabled a reduction in mounting area of 50 %. The μPC8179TK
is ideally suited to replace the μPC8179TB for footprint reduc-
tion and increased design density. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has excellent performance uniformity
and reliability.
ELECTRICAL CHARACTERISTICS,
NEC's stringent quality assurance and test procedures assure
the highest performance. consistency and reliability.
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)
PART NUMBER
PACKAGE OUTLINE
UPC8179TK
TK
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICC
Circuit Current (no input signal)
mA
2.9
4.0
5.4
GP
Power Gain,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
11.0
13.5
15.5
13.0
15.5
17.5
14.0
16.0
18.5
ISOL
Isolation,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
39.0
43.0
–
37.0
42.0
–
37.0
42.0
–
P1dB
Output Power at
1 dB gain
compression,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
dBm
-0.5
2.0
–
-2.0
0.5
–
-3.0
0.5
–
NF
Noise Figure,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
–
–
–
5.0
6.5
5.0
6.5
5.0
6.5
RLIN
Input Return Loss,
(without matching
circuit)
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
4.0
7.0
–
4.0
7.0
–
6.0
9.0
–