UPC8179TB Datasheet, PDF (1/11 Pages) NEC – SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

SILICON RFIC LOW
CURRENT AMPLIFIER _UPC8179TB
FOR MOBILE COMMUNICATIONS
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
• SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
POWER GAIN vs. FREQUENCY
+20
VCC = 3.0 V
TA = -40°C
+10
TA = +25°C
TA = +85°C
2.4 GHz
• HIGH EFFICIENCY:
0
PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz
PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz
–10
PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz
• POWER GAIN:
GP = 13.5 dB TYP at f = 1.0 GHz
GP = 15.5 dB TYP at f = 1.9 GHz
GP = 15.5 dB TYP at f = 2.4 GHz
• EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
–20
1.0 GHz
–30
1.9 GHz
–40
0.1
0.3
1.0
3.0
Output match for best performance
at each frequency
• LOW CURRENT CONSUMPTION:
ICC = 4.0 mA TYP AT VCC = 3.0 V
• OPERATING FREQUENCY:
DESCRIPTION
ICC = 4.0 mA TYP AT VCC = 3.0 V
NEC's UPC8179TB is a silicon monolithic integrated circuit
• LIGHT WEIGHT:
7 mg (standard Value)
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50Ω wideband matched IC.
APPLICATIOIN
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
• Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
ELECTRICAL CHARACTERISTICS,
and reliability.
(Unless otherwise specified, TA = +25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω, at LC matched Frequency)
PART NUMBER
UPC8179TB
PACKAGE OUTLINE
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICC
Circuit Current (no input signal)
mA
2.9
4.0
5.4
GP
Power Gain,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
11.0
13.5
15.5
13.0
15.5
17.5
13.0
15.5
17.5
ISOL
Isolation,
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
39.0
44.0
–
37.0
42.0
–
36.0
41.0
–
P1dB
Output Power at
1 dB gain
compression,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
-0.5
3.0
–
-2.0
1.5
–
-3.0
1.0
–
NF
Noise Figure,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
–
–
–
5.0
6.5
5.0
6.5
5.0
6.5
RLIN
Input Return Loss,
(without matching
circuit)
f = 1.0 GHz, PIN = -30 dBm
f = 1.9 GHz, PIN = -30 dBm
f = 2.4 GHz, PIN = -30 dBm
dB
4.0
7.0
–
4.0
7.0
–
6.0
9.0
–
California Eastern Laboratories