UPC8178TB Datasheet, PDF (1/7 Pages) California Eastern Labs – SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

SILICON RFIC
LOW CURRENT AMPLIFIER ^UPC8178TB
FOR MOBILE COMMUNICATIONS
FEATURES
POWER GAIN vs. FREQUENCY
• LOW CURRENT CONSUMPTION
ICC = 1.9 mA TYP @ VCC = 3.0 V
• SUPPLY VOLTAGE:
VCC = 2.4 to 3.3 V
+20
VCC = 3.0 V
TA = -40°C
+10
TA = +25°C
TA = +85°C
1.0 GHz
2.4 GHz
• EXCELLENT ISOLATION:
ISOL = 39 dB TYP @ f = 1.0 GHz
ISOL = 40 dB TYP @ f = 1.9 GHz
ISOL = 38 dB TYP @ f = 2.4 GHz
• POWER GAIN:
GP = 11.0 dB TYP @ f = 1.0 GHz
GP = 11.5 dB TYP @ f = 1.9 GHz
GP = 11.5 dB TYP @ f = 2.4 GHz
• OPERATING FREQUENCY:
0.1 to 2.4 GHz (Output port LC matching)
• 1 dB GAIN COMPRESSION OUTPUT POWER:
PO(1 dB) = -4.0 dBm TYP @ f = 1.0 GHz
PO(1 dB) = -7.0 dBm TYP @ f = 1.9 GHz
PO(1 dB) = -7.5 dBm TYP @ f = 2.4 GHz
• HIGH-DENSITY SURFACE MOUNTING:
6-pin super minimold package (2.0 x 1.25 x 0.9 mm)
• LOW WEIGHT:
7 mg (Standard Value)
APPLICATIONS
• Buffer Amplifiers on 0.1 to 2.4 GHz mobile
communications system
ELECTRICAL CHARACTERISTICS
0
-10
-20
1.9 GHz
-30
-40
0.1
0.3
1.0
3.0
DESCRIPTION
The UPC8178TB is a silicon monolithic integrated circuit
designed as an amplifier for mobile communications. This IC
can realize low current consumption with an external chip
inductor which cannot be realized on an internal 50 Ω wideband
matched IC. This low current amplifier operates on 3.0 V. This
device is manufactured using NEC's 30 GHz fmax UHS0 (Ultra
High Speed Process) silicon bipolar process which uses direct
silicon nitride passivation film and gold electrodes. These
materials can protect the chip surface from pollution and
prevent corrosion/migration. Thus, this IC has excellent perfor-
mance, uniformity and reliability.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
(TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency unless otherwise specified))
PART NUMBER
PACKAGE OUTLINE
UPC8178TB
S06
SYMBOLS
PARAMETERS AND CONDITIONS¹
UNITS
MIN
TYP
MAX
ICC
GP
ISOL
PO(1dB)
Circuit Current (no signal)
Power Gain
f = 1.0 GHz
f = 1.9 GHz
Isolation
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
1 dB Gain Compression Output Power
NF
RLin
Noise Figure
Input Return Loss
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
mA
1.4
1.9
2.4
dB
9.0
11.0
13.0
dB
9.0
11.5
13.5
dB
9.0
11.5
13.5
dB
34
39
–
dB
35
40
–
dB
33
38
–
dBm
-8.0
-4.0
–
dBm
-11.0
-7.0
–
dBm
-11.5
-7.5
–
dB
–
5.5
7.0
dB
–
5.5
7.0
dB
–
5.5
7.0
dB
4
7
–
dB
5
8
–
dB
6.5
9.5
–
California Eastern Laboratories