UPC8151TB Datasheet, PDF (1/10 Pages) California Eastern Labs – SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES

SILICON RFIC
LOW CURRENT AMPLIFIER FOR UPC8151TB
CELLULAR/CORDLESS TELEPHONES
FEATURES
• SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V
• LOW CURRENT CONSUMPTION:
UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
• HIGH EFFICIENCY:
UPC8151TB; P1dB = +2.5 dBm TYP @ f = 1 GHz
• POWER GAIN:
UPC8151TB; GP = 12.5 dB TYP @ f = 1 GHz
• OPERATING FREQUENCY:
100 MHz to 1900 MHz (Output port LC matching)
• EXCELLENT ISOLATION:
UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
+20
Tuned at 1 GHz
VCC = 3.3 V
+10
0
VCC = 3.0 V _{VCC = 2.4 V}
-10
0.3
1.0
3.0
Frequency, f (GHz)
DESCRIPTION
NEC's UPC8151TB is a silicon RFIC designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20 GHz fT NESAT™ III
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, this IC has excellent performance, uniformity
and reliability.
+20
Tuned at 1.9 GHz
VCC = 3.0 V
+10
VCC = 3.3 V
0
-10
0.3
1.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = VOUT = 3.0 V, ZL = ZS = 50 Ω, at LC matched frequency)
PART NUMBER
PACKAGE OUTLINE
UPC8151TB
SO6
SYMBOLS
Icc
GP
ISOL
P1dB
NF
RLIN
RLOUT
IM3
PARAMETERS AND CONDITIONS
Circuit Current, No signal
Power Gain
f = 1.00 GHz
f = 1.90 GHz
Isolation
f = 1.00 GHz
f = 1.90 GHz
Output Power at 1 dB Compression Point
f = 1.00 GHz
f = 1.90 GHz
Noise Figure
f = 1.00 GHz
f = 1.90 GHz
Input Return Loss(without matching circuit)
f = 1.00 GHz
f = 1.90 GHz
Output Return Loss (with external matching circuit)
f = 1.00 GHz
f = 1.90 GHz
3rd Order Intermodulation Distortion
f1 = 1.000 GHz, f2 = 1.001 GHz, PO(each) = -20 dBm
f1 = 1.900 GHz, f2 = 1.901 GHz, PO(each) = -20 dBm
UNITS
MIN
TYP
MAX
mA
2.8
4.2
5.8
dB
9.5
12.5
14.5
12.0
15.0
17.0
dB
33.0
38.0
–
29.0
34.0
–
dBm
-1.0
+2.5
–
-3.0
+0.5
–
dB
–
6.0
7.5
–
6.0
7.5
dB
2.0
5.0
–
1.0
4.0
–
dB
10.0
12.0
dBc
-62.0
54.0
California Eastern Laboratories