UPC2711TB Datasheet, PDF (1/10 Pages) NEC – 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

BIPOLAR ANALOG INTEGRATED CIRCUITS
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
• POWER GAIN:
UPC2711TB: GP = 13 dB TYP
UPC2712TB: GP = 20 dB TYP
DESCRIPTION
NEC's UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz f_T
NESAT^TM III silicon bipolar process. These devices are de-
signed for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
NEC's stringent quality assurance and test procedure ensure
the highest reliability and performance.
TYPICAL PERFORMANCE CURVES
GAIN vs. FREQUENCY
25
UPC2712TB
20
15
UPC2711TB
10
5
0.5
1.0
1.5
2.0 2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 W)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
ICC
Circuit Current (no signal)
GP
Power Gain, f = 1 GHz
fU
∆GP
PO(SAT)
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 100 MHz)
Gain Flatness, f = 0.1 GHz to 2.5 GHz
Maximum Output Level, f = 1 GHz, PIN = 0 dBm
NF
Noise Figure, f = 1 GHz
RLIN
Input Return Loss, f = 1 GHz
RLOUT Output Return Loss, f = 1 GHz
ISOL
Isolation, f = 1 GHz
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
UPC2711TB
S06
MIN
TYP MAX
9
12
15
11
13
16.5
2.7
2.9
±0.8
-2
+1
5
6.5
20
25
9
12
25
30
UPC2712TB
S06
MIN TYP MAX
9
12
15
18
20
23.5
2.2 2.6
±0.8
0
+3
4.5
6
9
12
10
13
28
33
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 22, 2005