UPC2708TB Datasheet, PDF (1/8 Pages) NEC – 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

5 V, SUPER MINIMOLD
WIDEBAND SI RFIC AMPLIFIER
UPC2708TB
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package
• HIGH GAIN: 15 dB TYP
• SATURATED OUTPUT POWER: +10 dBm
• WIDEBAND RESPONSE: fu = 2.9 GHz TYP
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
DESCRIPTION
NEc's UPC2708TB is a Silicon RFIC manufactured using the
NESAT III process. This device is suitable as buffer amplifier
for DBS, PCS and other communication receivers. The
UPC2708TB is pin compatible and has comparable perfor-
mance as the larger UPC2708T, so it is suitable for use as a
replacement to help reduce system size. The IC is housed in
a 6 pin super minimold or SOT-363 package.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
GAIN vs.
FREQUENCYand TEMPERATURE
TA = -40°C
TA = +25°C
TA = +85°C
TA = +85°C
TA = -40°C
TA = +25°C
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 1 GHz, VCC = 5 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICC
Circuit Current (no signal)
mA
20
GS
Small Signal Gain
dB
13
fU
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
GHz
2.7
∆GS
Gain Flatness, f = 0.1 - 2.6 GHz
dB
PSAT
Saturated Output Power
dBm
+7.5
P1dB
NF
RLIN
RLOUT
ISOL
∆GT
RTH
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
dBm
dB
dB
8
dB
16
dB
18
dB/°C
°C/W
UPC2708TB
S06
TYP
26
15
2.9
±0.8
+10
+7.5
6.5
11
20
23
+0.002
MAX
33
18.5
8
325