UPA863TD Datasheet, PDF (1/27 Pages) California Eastern Labs – NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD

DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
μPA863TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., ⏐S21e⏐² = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP., ⏐S21e⏐² = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
3-pin thin-type ultra super minimold part No.
Q1
2SC5436
Q2
2SC5800
ORDERING INFORMATION
Part Number
μPA863TD-A
μPA863TD-T3-A
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, consult your nearby sales office.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. P15686EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)