UPA802T_09 Datasheet, PDF (1/9 Pages) California Eastern Labs – NPN SILICON HIGH FREQUENCY TRANSISTOR

SILICON TRANSISTOR
UPA802T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• SMALL PACKAGE STYLE:
2 NE681 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.4 dB TYP at 1 GHz
• HIGH GAIN:
|S21E|² = 12 dB TYP at 1 GHz
• HIGH GAIN BANDWIDTH: fT = 7 GHz
• LOW CURRENT OPERATION
DESCRIPTION
The UPA802T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0.65 ¹
2.0 ± 0.2
1.3
2
3
6
0.2 (All Leads)
5
4
0.9 ± 0.1
0.7
0.15
+0.10
- 0.05
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
0 ~ 0.1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA802T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
μA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
μA
hFE1
Forward Current Gain at VCE = 3 V, IC = 7 mA
70
100
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
4.5
7.0
Cre²
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|²
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
dB
10
12
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
1.4
hFE1/hFE2
hFE Ratio: ^{hFE1 = Smaller Value of Q1, or Q2}
hFE2 = Larger Value of Q1 or Q2
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA802T-T1, 3K per reel.
MAX
0.8
0.8
240
0.9
1.7