UPA801T Datasheet, PDF (1/8 Pages) California Eastern Labs – NPN SILICON HIGH FREQUENCY

NPN SILICON HIGH
FREQUENCY TRANSISTOR
UPA801T
FEATURES
• SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
• HIGH GAIN:
|S21E|² = 9.0 dB TYP at 1 GHz
• HIGH COLLECTOR CURRENT: 100mA
DESCRIPTION
NEC's UPA801T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
1
0.65
2.0 ± 0.2
1.3
2
3
6
0.2 (All Leads)
5
4
0.9 ± 0.1
0.7
+0.10
0.15 _{- 0.05}
PIN OUT
1. Collector Transistor 1
0 ~ 0.1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
IEBO
hFE1
fT
Cre²
|S21E|²
NF
hFE1/hFE2
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain at VCE = 3 V, IC = 7 mA
Gain Bandwidth at VCE = 3 V, IC = 7 mA
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
hFE Ratio: ^{hFE1 = Smaller Value of Q1 or Q2}
hFE2 = Larger Value pf Q1 or Q2
µA
µA
GHz
pF
dB
dB
70
3.0
7
0.85
UPA801T
S06
TYP
120
4.5
0.7
9
1.2
Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA801T-T1, 3K per reel.
.
MAX
1.0
1.0
250
1.5
2.5
California Eastern Laboratories