UPA800T Datasheet, PDF (1/9 Pages) NEC – HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

NPN SILICON HIGH _UPA800T
FREQUENCY TRANSISTOR
FEATURES
• SMALL PACKAGE STYLE:
2 NE680 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.9 dB TYP at 2 GHz
• HIGH GAIN:
|S21E|² = 7.5 dB TYP at 2 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
DESCRIPTION
NEC's UPA800T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
1
0.65
2.0 ± 0.2
1.3
2
3
6
0.2 (All Leads)
5
4
0.9 ± 0.1
0.7
+0.10
0.15 _{- 0.05}
PIN OUT
0 ~ 0.1
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA800T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
hFE1
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain at VCE = 3 V, IC = 5 mA
µA
80
fT
Gain Bandwidth at VCE = 3 V, IC = 5 mA
GHz
5.5
Cre²
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|² Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz
dB
5.5
NF
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz
dB
TYP
120
8.0
0.3
7.5
1.9
Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA800T-T1, 3K per reel..
MAX
1.0
1.0
200
0.7
3.2
California Eastern Laboratories