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| NX8350TS Datasheet, PDF (1/8 Pages) Renesas Technology Corp – LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION | |||
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NX8350TS
Preliminary
LASER DIODE
1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
Data Sheet
R08DS0025EJ0100
Rev.1.00
Sep 19, 2010
DESCRIPTION
The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser
diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package
designed for CFP transceiver.
FEATURES
ï· Internal optical isolator
ï· Peak emission wavelength
ï· Optical output power
ï· Low threshold current
ï· Wide operating temperature range
ï· InGaAs monitor PIN-PD
ï· IEEE802.3ba compliant
1 271/1 291/1 311/1 331 nm
Pf = 2 dBm
Ith = 8 mA TYP. @ TC = 25ï°C
TC = ï5 to +85ï°C
APPLICATIONS
ï· 40 G BASE-LR4
R08DS0025EJ0100 Rev.1.00
Sep 19, 2010
Page 1 of 7
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