NX7661 Datasheet, PDF (1/4 Pages) California Eastern Labs – NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE

NEC's 1625 nm InGaAsP MQW FP
PULSED LASER DIODE IN DIP PACKAGE
NX7661JB-BC
FOR OTDR APPLICATION (120 mW MIN)
FEATURES
• HIGH OUTPUT POWER:
Pf = 120 mW MIN at IFP = 1000 mA,
Pulse width (PW) = 10 ms, Duty = 1%
• LONG WAVELENGTH:
λC = 1625 nm
• INTERNAL THERMOELECTRIC COOLER, THERMISTOR
• HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE
• SINGLE MODE FIBER PIGTAIL
DESCRIPTION
NEC's NX7661JB-BC is a 1625 nm developed strained Mul-
tiple Quantum Well (st-MQW) structure pulse laser diode DIP
module with single mode fiber and internal thermoelectric
cooler. It is designed for light sources of optical measurement
equipment (OTDR).
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)
SYMBOLS
VFP
ITH
Pf
λC
σ
tr
tf
PART NUMBER
PARAMETERS AND CONDITIONS
Forward Voltage, CW, IF = 30 mA
Threshold Current, CW
Optical Output Power from Fiber, IFP = 1000 mA,
PW = 10 µs, Duty = 1 %
Center Wavelength, RMS, IFP = 1000 mA,
PW = 10 µs, Duty = 1 %
Spectral Width, RMS, IFP = 1000 mA,
PW = 10 µs, Duty = 1 %
Rise Time, 10-90%
Fall Time, 90-10%
UNITS
V
mA
mW
nm
nm
ns
ns
MIN
120
1615
NX7661JB-BC
TYP
30
1625
7.0
MAX
4.0
70
1635
15.0
2.0
2.0
ELECTRO-OPTICAL CHARACTERISTICS
APPLICABLE TO THERMISTOR AND TEC: (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)
PART NUMBER
NX7661JB-BC
SYMBOLS
R
B
IC
VC
∆T¹
PARAMETERS AND CONDITIONS
Thermistor Resistance, TLD = 25°C
B Constant
Cooler Current, ∆T = 40 K
Cooler Voltage, ∆T = 40 K
Cooling Capacity, IC = 0.8 A
Note:
1. ∆T = | TC - TLD |.
UNITS
kΩ
K
A
V
K
MIN
9.5
3350
40
TYP
10.0
3450
0.6
1.1
MAX
10.5
3550
0.8
1.5
California Eastern Laboratories