NX7561 Datasheet, PDF (1/4 Pages) California Eastern Labs – NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE

NEC's 1550 nm InGaAsP MQW FP
PULSED LASER DIODE IN DIP PACKAGE ^NX7561JB-BC
FOR OTDR APPLICATION (135 mW MIN)
FEATURES
• HIGH OUTPUT POWER:
Pf = 135 mW MIN at IFP = 1000 mA,
Pulse width (PW) = 10ms, Duty = 1%
• LONG WAVELENGTH:
λC = 1550 nm
• INTERNAL THERMOELECTRIC COOLER
• HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE
• SINGLE MODE FIBER PIGTAIL
DESCRIPTION
NEC's NX7561JB-BC is a 1550 nm developed strained Mul-
tiple Quantum Well (st-MQW) structure pulsed laser diode DIP
module with single mode fiber and internal thermoelectric
cooler. It is designed for light sources of optical measurement
equipment (OTDR).
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)
SYMBOLS
VFP
ITH
Pf
λC
PART NUMBER
PARAMETERS AND CONDITIONS
Forward Voltage, CW, IF = 30 mA
Threshold Current, CW
Optical Output Power from Fiber IFP = 1000 mA¹
IFP = 600 mA¹
IFP = 400 mA¹
Center Wavelength, RMS, IFP = 400, 600, 1000 mA¹
UNITS
V
mA
mW
mW
mW
nm
MIN
135
70
20
1530
NX7561JB-BC
TYP
2.5
40
1550
σ
Spectral Width, RMS, IFP = 400, 600, 1000 mA¹
nm
6.0
tr
Rise Time, 10-90%
tf
Fall Time, 90-10%
Note:
1. PW = 10 µs, Duty = 1%
ns
1.0
ns
1.4
MAX
4.0
70
1570
10.0
2.0
2.0
ELECTRO-OPTICAL CHARACTERISTICS
APPLICABLE TO THERMISTOR AND TEC: (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)
PART NUMBER
NX7561JB-BC
SYMBOLS
R¹
B
IC
VC
∆T¹
PARAMETERS AND CONDITIONS
Thermistor Resistance, TLD = 25°C
B Constant
Cooler Current, ∆T = 40 K
Cooler Voltage, ∆T = 40 K
Cooling Capacity, IC = 0.8 A
Note:
1. ∆T = | TC - TLD |.
UNITS
kΩ
K
A
V
K
MIN
9.5
3350
40
TYP
10.0
3450
0.6
1.1
MAX
10.5
3550
0.8
1.5
California Eastern Laboratories