NX7529 Datasheet, PDF (1/4 Pages) California Eastern Labs – NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE

NEC's 1550 nm InGaAsP MQW FP
PULSED LASER DIODE _NX7529BB-AA
IN COAXIAL PACKAGE
FOR OTDR APPLICATION (20 mW MIN)
FEATURES
• HIGH OUTPUT POWER:
Pf = 40 mW at IFP = 400 mA,
Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%.
• LONG WAVELENGTH:
λC = 1550 nm
DESCRIPTION
NEC's NX7529BB-AA is a 1550 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode coaxial mod-
ule with single mode fiber. This module is specified to operate
under pulsed conditions and is designed for a light source of
Optical Time Domain Reflectometer(OTDR).
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
SYMBOLS
VFP
ITH
Pf
λC
σ
tr
tf
PARAMETERS AND CONDITIONS
Forward Voltage, IFP = 400 mA, PW = 10 µs,
Duty = 1%
Threshold Current
Optical Output Power from Fiber, IFP = 400 mA,
PW = 10 µs, Duty = 1%
Center Wavelength, IFP = 400 mA, PW = 10 µs,
Duty = 1%, RMS (-20 dB)
Spectral Width, IFP = 400 mA, PW = 10 µs,
Duty = 1%, RMS (-20 dB)
Rise Time, 10-90%
Fall Time, 90-10%
UNITS
V
mA
mW
nm
nm
ns
ns
MIN
20
1530
NX7529BB-AA
TYP
2.5
40
40
1550
6.0
MAX
4.0
50
1570
10.0
1.0
1.0
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60°C)
PART NUMBER
SYMBOLS
Ith
Pf
λC
∆λ/∆T
σ
PARAMETERS AND CONDITIONS
Threshold Current
Optical Output Power from Fiber, IFP = 400 mA,
PW = 10 µs, Duty = 1%
Center Wavelength, IFP = 400 mA, PW = 10 µs,
Duty = 1%, RMS (-20 dB)
Temperature Dependency of Center Wavelength
Spectral Width, IFP = 400 mA, PW = 10 µs,
Duty = 1%, RMS (-20 dB)
UNITS
mA
mW
nm
nm/°C
nm
MIN
10
1520
NX7529BB-AA
TYP
0.35
MAX
75
1585
10
California Eastern Laboratories