NX7329BB-AA Datasheet, PDF (1/4 Pages) California Eastern Labs – NECs 1310 nm InGaAsP MQW FP PULSED LADER DIODE IN COAXIAL PACKAGE FOR ITDR APPLICATION (25 mW MIN)

NEC's 1310 nm InGaAsP MQW FP
PULSED LASER DIODE _NX7329BB-AA
IN COAXIAL PACKAGE
FOR OTDR APPLICATION (25 mW MIN)
FEATURES
• HIGH OUTPUT POWER:
Pf = 50 mW at IFP = 400 mA,
Pulse Condition: Pulse Width (PW) = 10 µs, Duty = 1%
• LONG WAVELENGTH
λC = 1310 nm
DESCRIPTION
NEC's NX7329BB-AA is a 1310 nm Multiple Quantum Well
(MQW) structured laser diode coaxial module with single
mode fiber. This module is specified to operate under pulsed
condition and is designed for a light source of Optical Time
Domain Reflectometer (OTDR).
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)
SYMBOLS
VFP
ITH
Pf
λC
σ
tr
tf
PART NUMBER
PARAMETERS AND CONDITIONS
Forward Voltage, IFP = 400 mA, PW = 10 µs, Duty = 1%
Threshold Current
Optical Output Power from Fiber,
IFP = 400 mA, PW = 10 µs, Duty = 1%
Center Wavelength,
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)
Spectral Width,
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)
Rise Time, 10 to 90%
Fall Time, 90 to 10%
UNITS
V
mA
mW
nm
nm
ns
ns
MIN
25
1290
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60°C)
SYMBOLS
ITH
Pf
λC
∆λ/∆T
σ
PART NUMBER
PARAMETERS AND CONDITIONS
Threshold Current,
Optical Output Power from Fiber
IFP = 400 mA, PW = 10 µs, Duty = 1%
Center Wavelength,
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)
Temperature Dependence of Center Wavelength
Spectral Width^,
IFP = 400 mA, PW = 10 µs, Duty = 1% RMS (-20 dB)
UNITS
mA
mA
nm
nm/°C
nm
MIN
15
1280
NX7329BB-AA
TYP
2.5
20
50
1310
4.5
MAX
4.0
30
1330
10
1.0
1.0
NX7329BB-AA
TYP
MAX
50
1342.5
0.35
10
California Eastern Laboratories