NX6508 Datasheet, PDF (1/4 Pages) California Eastern Labs – NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

PRELIMINARY DATA SHEET
NEC's InGaAsP
MQW-DFB LASER DIODE
IN CAN PACKAGE FOR
2.5 Gb/s, CWDM APPLICATIONS
NX6508
Series
FEATURES
• OPTICAL OUTPUT POWER
PO = 5.0 mW
• PEAK EMISSION WAVELENGTH
λp = 1 470 to 1 610 nm
(Based on ITU-T recommendations)
• LOW THRESHOLD CURRENT
Ith = 10 mA
• HIGH SPEED
tr = 100 ps MAX
• SIDE MODE SUPPRESSION RATIO
SMSR = 40 dB
• OPERATING CASE TEMPERATURE RANGE
TC = -20 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE
Ø5.6 mm
• BASED ON TELCORDIA RELIABILITY
DESCRIPTION
NEC's NX6508 Series are 1 470 to 1 610 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back
(DFB) laser diode with InGaAs monitor PIN-PD. These
devices are ideal for 2.5 Gb/s CWDM application.
ELECTRO-OPTICAL CHARACTERISTICS (TC = -20 to +85°C, unless otherwise specified)
PART NUMBER
NX6508 SERIES
SYMBOLS
Po
Vop
Ith
PARAMETER AND CONDITIONS
Optical Output Power from Fiber, CW
Operating Voltage, Po = 5.0 mW
Threshold Current, TC = 25°C
ηd
Δηd
λp
Δλ/ΔT
SMSR
tr
Differential Efficiency
Po = 5.0 mW, TC = 25°C
Po= 5.0 mW
Temperature Dependence of Differential Efficiency
Δηd = 10 log
ηd (@ TC°C)
ηd (@ 25°C)
Peak Emission Wavelength, Po = 5.0 mW
Temperature Dependence of Peak Emission Wavelength, CW
Side Mode Suppression Ratio, Po = 5.0 mW
Rise Time, 20-80%, Po = 5.0 mW
Continued on next page
UNIT
mW
V
mA
W/A
dB
MIN.
0.18
0.10
−3.0
TYP.
5.0
1.1
10
0.25
MAX.
1.6
20
50
−1.6
nm
λp−2
λp ^*1
λp+2
nm/°C 0.08
0.1
0.12
dB
30
40
ps
100
California Eastern Laboratories