NX6506 Datasheet, PDF (1/5 Pages) California Eastern Labs – NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS

NECʼs 1550 nm InGaAsP MQW-DFB
LASER DIODE IN CAN PACKAGE NX6506 SERIES
FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
FEATURES
• OPTICAL OUTPUT POWER:
PO = 5.0 mW
• LOW THRESHOLD CURRENT:
ITH = 10 mA
• DIFFERENTIAL EFFICIENCY:
ηd = 0.25 W/A
• SIDE MODE SUPPRESSION RATIO:
SMSR = 40 dB
• WIDE OPERATING TEMPERATURE RANGE:
TC = -20 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• FOCAL POINT:
7.5 mm
APPLICATION
• STM-1, STM-4, ITU-T Recommendations
• FTTH PON (Fiber To The Home Passive Optical Network)
• 1.25 Gb/s: Gigabit Ethernet
DESCRIPTION
NECʼs NX6506 Series is a 1550 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
California Eastern Laboratories