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| NX6352GP Datasheet, PDF (1/6 Pages) California Eastern Labs – LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE | |||
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A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6352GP Series
Data Sheet
LASER DIODE
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
R08DS0088EJ0100
Rev.1.00
Feb 25, 2013
DESCRIPTION
The NX6352GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser
diode with InGaAs monitor PIN-PD.
APPLICATIONS
⢠9.8 Gbps CPRI
⢠10G E-PON ONU
FEATURES
⢠Optical output power
⢠Low threshold current
⢠Differential efficiency
⢠Wide operating temperature range
⢠InGaAs monitor PIN-PD
⢠CAN package
⢠Focal point
PO = 8.5 mW
Ith = 7 mA
ηd = 0.35 W/A
TC = â40 to +85°C
Ï 5.6 mm
7.5 mm
R08DS0088EJ0100 Rev.1.00
Feb 25, 2013
Page 1 of 5
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