NX6350GP Datasheet, PDF (1/6 Pages) California Eastern Labs – 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE

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NX6350GP Series
LASER DIODE
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION
DESCRIPTION
The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with
InGaAs monitor PIN-PD.
APPLICATIONS
• 40GBASE-LR4
• 10 Gb/s E-PON ONU
• Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P_O = 8.5 mW
I_th = 8 mA
η_d = 0.35 W/A
T_C = −5 to +85°C
φ 5.6 mm
7.5 mm
Data Sheet
R08DS0065EJ0100
Rev.1.00
Jul 05, 2012
R08DS0065EJ0100 Rev.1.00
Jul 05, 2012
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