NX6350EP Datasheet, PDF (1/6 Pages) California Eastern Labs – LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION

A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6350EP Series
Data Sheet
LASER DIODE
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
FOR 40GBASE-LR4 APPLICATION
R08DS0066EJ0100
Rev.1.00
Aug 14, 2012
DESCRIPTION
The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with
InGaAs monitor PIN-PD.
APPLICATIONS
• 40GBASE-LR4
• Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P_O = 8.5 mW
I_th = 8 mA
η_d = 0.35 W/A
T_C = −5 to +85°C
φ 5.6 mm
6.2 mm
R08DS0066EJ0100 Rev.1.00
Aug 14, 2012
Page 1 of 5