 English |
|
|
|
|
|
|
|
| NX6342EP Datasheet, PDF (1/6 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION | |||
| |||
|
A Business Partner of Renesas Electronics Corporation.
Preliminary
NX6342EP
LASER DIODE
1 310 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s BASE-LR/LW APPLICATION
Data Sheet
R08DS0050EJ0100
Rev.1.00
Jan 19, 2012
DESCRIPTION
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
⢠10 Gb/s BASE-LR/LW (IEEE802.3ae)
FEATURES
⢠Optical output power
⢠Low threshold current
⢠Differential efficiency
⢠Wide operating temperature range
⢠InGaAs monitor PIN-PD
⢠CAN package
⢠Focal point
PO = 8.5 mW
Ith = 8 mA
ηd = 0.23 W/A
TC = â5 to +85°C
Ï 5.6 mm
6.0 mm
R08DS0050EJ0100 Rev.1.00
Jan 19, 2012
Page 1 of 5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese