NX6309GH Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION

LASER DIODE
NX6309GH
1 310 nm InGaAsP MQW-DFB LASER DIODE
FOR 1.25 Gb/s FTTH PON APPLICATION
DESCRIPTION
The NX6309GH is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATION
• 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
Po = 10.0 mW
lth = 10 mA
ηd = 0.40 W/A
TC = −40 to +85°C
φ 5.6 mm
10 mm
Document No. PL10693EJ03V0DS (3rd edition)
Date Published March 2010 NS
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