NX6306 Datasheet, PDF (1/5 Pages) California Eastern Labs – 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS

PRELIMINARY DATASHEET
NEC's 1310 nm InGaAsP MQW DFB
LASER DIODE IN CAN PACKAGE NX6306 SERIES
FOR 155 Mb/s and 622 Mb/s APPLICATIONS
DESCRIPTION
NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
This device is ideal for Gigabit Ethernet and Synchronous
Digital Hierarchy (SDH) system STM-1 (I-1, S-1.1, L-1.1),
STM-4 (I-4, S-4.1, L-4.1), ITU-T recommendations.
NX6306S Series
FEATURES
• OPTICAL OUTPUT POWER:
Po = 5.0 mW
• LOW THRESHOLD CURRENT:
lth = 10 mA @ TC = 25°C
• HIGH SPEED:
tr, tf = 0.5 ns MAX.
• 40% REDUCTION OF MOUNTING AREA:
5-pin SOP × 2
• SIDE MODE SUPPRESSION RATIO:
SWSR = 45 dB @ TYP.
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
φ 5.6 mm
• BASED ON TELCORDIA RELIABILITY
NX6306G Series
APPLICATIONS
• 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1)
• 622 Mb/s: STM-4 (I-4, S-4.1, L-4.1)
• 1.25 Gb/s: Gigabit Ethernet
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
California Eastern Laboratories
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