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| NX5330SA Datasheet, PDF (1/5 Pages) California Eastern Labs – 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS | |||
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LASER DIODE
NX5330SA
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
DESCRIPTION
The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured
Fabry-Perot (FP) laser diode. This device is specified to operate under
pulsed condition and designed for light source of Optical Time Domain
Reflectometer (OTDR).
FEATURES
⢠High output power
⢠Long wavelength
PO = 350 mW @ IFP = 1 000 mA*1
ï¬C = 1 310 nm
*1 Pulse Conditions: Pulse width (PW) = 10 ïs, Duty = 1%
Document No. PL10699EJ01V0DS (1st edition)
Date Published January 2008 NS
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