NX5317 Datasheet, PDF (1/9 Pages) California Eastern Labs – 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

LASER DIODE
NX5317 Series
1 310 nm FOR FTTH PON APPLICATION
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5317 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode. These devices are designed for
application up to 1.25 Gb/s.
APPLICATION
• FTTH PON (B-PON, GE-PON 10 km) system
FEATURES
• Optical output power
Po = 15.0 mW
• Low threshold current
lth = 7 mA
• Differential Efficiency
ηd = 0.5 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD (NX5317EH)
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
Document No. PL10609EJ01V0DS (1st edition)
Date Published January 2007 NS CP(N)
2007